Representative from ISSP UL Laboratory of Spectroscopy Baiba Bērziņa participated in the International Workshop on Nitride Semiconductors 2018 (IWN 2018) which was held in Kanazawa, Japan on November 11-16. She presented the poster “F-centers as Luminescent Defects in AlN and hBN”.
IWN 2018 was organized as a combination of four independent workshops. In each workshop, in-depth discussions were held on a focused aspect of the essential physics and chemistry underlying the critical issues associated with nitride materials. These scientific activities contributed to breakthroughs related to critical technological barriers that need to be overcome to improve the performances of nitride devices.