2020, among other things, has been a good year for writing articles for scientific journals.
Article “Study of the thermochromic phase transition in CuMo1-x WxO4 solid solutions at the W L3-edge by resonant X-ray emission spectroscopy” (DOI 10.1016/j.actamat.2020.116581) by researchers of the ISSP UL’s EXAFS Spectroscopy Laboratory MSc. Inga Pudza, Dr.phys. Aleksandr Kalinko, MSc. Arturs Cintins and Dr.phys. Alexei Kuzmin was published in scientific journal Acta Materialia (impact factor of 7.656) volume 205 (February 2021).
In the article, the polycrystalline CuMo1−xWxO4 solid solutions were studied by resonant X-ray emission spectroscopy (RXES) at the W L3 -edge was used to follow a variation of the tungsten local atomic and electronic structures across thermochromic phase transition in polycrystalline CuMo1−xWxO4 solid solutions as a function of sample composition and temperature. The crystal-field splitting parameter Δ for the 5d(W)-states was obtained from the analysis of the RXES plane and was used to evaluate the coordination of tungsten atoms.
Whereas, in its March 2021 issue, high-ranking journal Materials Today Energy (impact factor 5,604) has published an article “Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in thermoelectric generators” (DOI 10.1016/j.mtener.2020.100587). The co-author of this article is Dr.phys Anatolijs Šarakovskis – leading researcher of the ISSP UL’s Laboratory of Spectroscopy. The research behind the article was carried out in cooperation with scientists from University of Latvia and the new X-ray photoelectron spectrometer (XPS) was used for the research. The XPS is purchased within the elaborated infrastructure development plan of CAMART² using European Regional Development Fund (ERDF) funded project No. 18.104.22.168/17/I/002.
Other authors of the article J. Andzane, A. Felsharuk, U. Malinovskis, E. Kauranens, M. Bechelany, K.A. Niherysh, I.V. Komissarov, D. Erts.
In the article, a simple cost-effective physical vapor deposition method for obtaining high-quality Bi2Se3 and Sb2Te3 ultrathin films with thicknesses down to 5 nm on mica, fused quartz, and graphene substrates is reported. Physical vapor deposition of continuous Sb2Te3 ultrathin films with thicknesses 10 nm and below is demonstrated for the first time. Both Bi2Se3 and Sb2Te3 ultrathin films showed the Seebeck coefficient and thermoelectrical power factors comparable with the parameters obtained for the high-quality thin films grown by the molecular beam epitaxy method. Performance of the best Bi2Se3 and Sb2Te3 ultrathin films is tested in the two-leg prototype of a thermoelectric generator.